Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-689-1917 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 1N4334B, 1N4334B, RELEASE4575, 1N4334B, 1N4334B, 1N4334B, 1N4334B, 1N4334B, 1N4334B, 1N4334B, 5961-00-689-1917, 00-689-1917, 5961006891917, 006891917
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | FEB 12, 1971 | 00-689-1917 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-689-1917
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 1N4334B | 84411 | AMERICAN SHIZUKI CORPORATION |
| 1N4334B | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| RELEASE4575 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 1N4334B | 24444 | GENERAL SEMICONDUCTOR INDUSTRIES INC |
| 1N4334B | 16068 | INTERNATIONAL DIODE CORP |
| 1N4334B | 12969 | MICRO USPD INC |
| 1N4334B | 14552 | MICROSEMI CORPORATION |
| 1N4334B | 31338 | SEMITRONICS CORP |
| 1N4334B | 15818 | TELCOM SEMICONDUCTOR INC |
| 1N4334B | 01281 | TRW ELECTRONICS AND DEFENSE SECTORRF DEVICES |
Technical Data | NSN 5961-00-689-1917
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 20.0 MAXIMUM NOMINAL REGULATOR VOLTAGE |
| CURRENT RATING PER CHARACTERISTIC | AS13.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AG1.0 WATTS MAXIMUM |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.300 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.107 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |