NSN 5961-00-702-8032

Part Details | THYRISTOR SEMICONDUCTOR DEVICE

5961-00-702-8032 A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 2N1599A, 2N1599, RELEASE3171, 2N1599, 2N1599, 2N1599, 2N1599, 2N1599, 2N1599, 2N1599, 2N1599, 2N1599, 2N1599, 2N1599, G181243002, G181-243-002, 1596113261T, 2N1599, 2N1599, 2N1599, FBP00051, FBP-00-051, 5961-00-702-8032, 00-702-8032, 5961007028032, 007028032

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59JAN 01, 196100-702-803233096 ( SEMICONDUCTOR DEVICE, THYRISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-702-8032
Part Number Cage Code Manufacturer
2N1599AC7191ADELCO ELEKTRONIK GMBH
2N159980131ELECTRONIC INDUSTRIES ASSOCIATION
RELEASE317180131ELECTRONIC INDUSTRIES ASSOCIATION
2N159907263FAIRCHILD SEMICONDUCTOR CORP
2N159904713FREESCALE SEMICONDUCTOR, INC.
2N159924446GENERAL ELECTRIC COMPANY
2N159903508GENERAL ELECTRIC COSEMI-CONDUCTOR PRODUCTS DEPT
2N159903877GILBERT ENGINEERING CO INC/INCONSUB OF TRANSITRON ELECTRONIC CORP
2N159912969MICRO USPD INC
2N159914321PD & E ELECTRONICS LLC
2N1599K0268RAYTHEON SYSTEMS LTD
2N1599K0461RAYTHEON SYSTEMS LTD WEAPONSSUPPORT GROUP
2N159911961SEMICON COMPONENTS INC
2N159931338SEMITRONICS CORP
G181-243-00284347SINGER CO THE KEARFOTT DIV
1596113261TA2312SMA SEGNALAMENTO MARITTIMO AEREOAZIENDA DELLA GF - GALILEO SMA SRL
2N159930043SOLID STATE DEVICES, INC.
2N159901295TEXAS INSTRUMENTS INCORPORATEDDBA TEXAS INSTRUMENTS
2N159901281TRW ELECTRONICS AND DEFENSE SECTORRF DEVICES
FBP-00-05180103VEECO INSTRUMENTS INCLAMBDA DIV
Technical Data | NSN 5961-00-702-8032
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION JUNCTION CONTACT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC3.0 MAXIMUM GATE TRIGGER VOLTAGE, DC AND 2.0 MAXIMUM ON-STATE VOLTAGE, DC
CURRENT RATING PER CHARACTERISTICDN1.00 AMPERES MAXIMUM AND DW15.00 AMPERES MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT129.0 DEG CELSIUS CASE
INCLOSURE MATERIAL METAL
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE ANODE
MOUNTING METHOD TERMINAL
TERMINAL LENGTH1.500 INCHES MINIMUM
TERMINAL CIRCLE DIAMETER0.200 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
OVERALL LENGTH0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
OVERALL DIAMETER0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIAL FEATURESJUNCTION PATTERN ARRANGEMENT: PNPN