Part Details | TRANSISTOR
5961-00-712-3999 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N584, 2N584, 2N584, 2N5784, 5961-00-712-3999, 00-712-3999, 5961007123999, 007123999
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 01, 1963 | 00-712-3999 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-712-3999
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2N584 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 2N584 | 34371 | INTERSIL CORPORATIONDIV NA |
| 2N584 | 49671 | LOCKHEED MARTIN CORPORATIONDBA LOCKHEED MARTIN |
| 2N5784 | 53711 | NAVAL SEA SYSTEMS COMMAND |
Technical Data | NSN 5961-00-712-3999
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | GERMANIUM |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 25.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 14.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 12.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
| CURRENT RATING PER CHARACTERISTIC | AC100.00 MILLIAMPERES MAXIMUM AND BF5.00 MICROAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AB120.0 MILLIWATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 80.0 DEG CELSIUS AMBIENT AIR |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.081 INCHES MAXIMUM |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.410 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.240 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNP |