Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-732-2263 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 8558331, 8558331, 1N429, MILS19500299, MILS19500-299, 72069978, 720699-78, 72069978, 720699-78, 652C7, DRA496072, DRA49607-2, 5961-00-732-2263, 00-732-2263, 5961007322263, 007322263
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 01, 1961 | 00-732-2263 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-732-2263
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 8558331 | 99974 | DELCO ELECTRONICS CORPDELCO SYSTEMS OPNS |
| 8558331 | 24617 | GENERAL MOTORS CORP |
| 1N429 | 03877 | GILBERT ENGINEERING CO INC/INCONSUB OF TRANSITRON ELECTRONIC CORP |
| MILS19500-299 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| 720699-78 | 82577 | RAYTHEON COMPANYDBA RAYTHEON |
| 720699-78 | 05869 | RAYTHEON COMPANYDBA RAYTHEON |
| 652C7 | 96214 | RAYTHEON COMPANYDBA RAYTHEON |
| DRA49607-2 | 09975 | UNISYS CORPORATION |
Technical Data | NSN 5961-00-732-2263
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 6.2 MAXIMUM NOMINAL REGULATOR VOLTAGE |
| CURRENT RATING PER CHARACTERISTIC | EB7.50 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AF0.2 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS AMBIENT AIR |
| INCLOSURE MATERIAL | PLASTIC |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.125 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.370 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.200 INCHES MAXIMUM |