Part Details | TRANSISTOR
5961-00-732-7150 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N1756, RELEASE3324, 2N1756, 2N1756, 5961-00-732-7150, 00-732-7150, 5961007327150, 007327150
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 01, 1961 | 00-732-7150 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-732-7150
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2N1756 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| RELEASE3324 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 2N1756 | 12045 | ELECTRONIC TRANSISTORS CORP |
| 2N1756 | 07256 | SILICON TRANSISTOR CORPSUB OF BBF INC |
Technical Data | NSN 5961-00-732-7150
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | GERMANIUM |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| INTERNAL JUNCTION CONFIGURATION | PNP |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN AND 50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN |
| CURRENT RATING PER CHARACTERISTIC | AC3.00 AMPERES MAXIMUM AND AB2.00 AMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AB28.0 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 100.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 2 |
| TERMINAL TYPE AND QUANTITY | 1 CASE AND 2 PIN |
| OVERALL LENGTH | 0.288 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.789 INCHES NOMINAL |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |