NSN 5961-00-751-3183

Part Details | TRANSISTOR

5961-00-751-3183 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 2N1259, 2N1259, RELEASE3187, 2N1259, 2N1259, 2N1259, 5961-00-751-3183, 00-751-3183, 5961007513183, 007513183

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59JAN 01, 196300-751-318320588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-751-3183
Part Number Cage Code Manufacturer
2N125914909ALPINE INDUSTRIES INC
2N125980131ELECTRONIC INDUSTRIES ASSOCIATION
RELEASE318780131ELECTRONIC INDUSTRIES ASSOCIATION
2N125903776ESCO INC
2N125903877GILBERT ENGINEERING CO INC/INCONSUB OF TRANSITRON ELECTRONIC CORP
2N125982577RAYTHEON COMPANYDBA RAYTHEON
Technical Data | NSN 5961-00-751-3183
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION JUNCTION CONTACT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
CURRENT RATING PER CHARACTERISTICAC100.00 MILLIAMPERES MAXIMUM AND AE10.00 MILLIAMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAB275.0 MILLIWATTS MAXIMUM
INCLOSURE MATERIAL METAL
MOUNTING METHOD TERMINAL
TERMINAL LENGTH1.500 INCHES MINIMUM
TERMINAL CIRCLE DIAMETER0.200 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
OVERALL LENGTH0.260 INCHES MAXIMUM
OVERALL DIAMETER0.370 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIAL FEATURESJUNCTION PATTERN ARRANGEMENT: PNP