NSN 5961-00-752-0150

Part Details | TRANSISTOR

5961-00-752-0150 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: TQSD0697, RELEASE2591, 2N697, 2N697, N208826228, N2088262-28, 208826228, 2088262-28, 2N697, 15037232, 1503723-2, 33400029, 334-00-029, 33400012, 334-00-012, V811798, 811798, 2N697, N208826228, N2088262-28, 208826228, 2088262-28, 2N697, 2N697, 2N697, 3520197000, 352-0197-000, 393676, 2N697, 5961-00-752-0150, 00-752-0150, 5961007520150, 007520150

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59JAN 01, 196200-752-015020588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-752-0150
Part Number Cage Code Manufacturer
TQSD069704643COMTEC INFORMATION SYSTEMS INCDIGITRONICS DIV
RELEASE259180131ELECTRONIC INDUSTRIES ASSOCIATION
2N69780131ELECTRONIC INDUSTRIES ASSOCIATION
2N69707263FAIRCHILD SEMICONDUCTOR CORP
N2088262-2827914HONEYWELL INTERNATIONAL INCDBA HONEYWELL
2088262-2827914HONEYWELL INTERNATIONAL INCDBA HONEYWELL
2N69707688JOINT ELECTRON DEVICE ENGINEERINGCOUNCIL
1503723-256232LOCKHEED MARTIN CORPORATIONDBA LOCKHEED MARTIN
334-00-02901205LOGETRONICS CORPORATION
334-00-01201205LOGETRONICS CORPORATION
V811798K0967MBDA UK LIMITEDDBA MBDA UK LTD
811798K0967MBDA UK LIMITEDDBA MBDA UK LTD
2N6973B150RAYTHEON COMPANYDBA RAYTHEON
N2088262-2806845RAYTHEON COMPANYDBA RAYTHEON
2088262-2806845RAYTHEON COMPANYDBA RAYTHEON
2N69749956RAYTHEON COMPANYDBA RAYTHEON
2N697K0268RAYTHEON SYSTEMS LTD
2N697K0461RAYTHEON SYSTEMS LTD WEAPONSSUPPORT GROUP
352-0197-00013499ROCKWELL COLLINS, INC.DBA GOVERNMENT SYSTEMS
393676K1182THALES UK LIMITED DBA THALES UKLTDTRAINING AND SIMULATION
2N69701281TRW ELECTRONICS AND DEFENSE SECTORRF DEVICES
Technical Data | NSN 5961-00-752-0150
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION JUNCTION CONTACT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
CURRENT RATING PER CHARACTERISTICBF1.00 MICROAMPERES MAXIMUM AND AE150.00 MILLIAMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAB600.0 MILLIWATTS MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT200.0 DEG CELSIUS JUNCTION
INCLOSURE MATERIAL METAL
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE COLLECTOR
MOUNTING METHOD TERMINAL
TERMINAL LENGTH1.500 INCHES MINIMUM
TERMINAL CIRCLE DIAMETER0.200 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
OVERALL LENGTH0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
OVERALL DIAMETER0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIAL FEATURESJUNCTION PATTERN ARRANGEMENT: NPN
PRECIOUS MATERIAL SILVER AND GOLD
PRECIOUS MATERIAL AND LOCATIONTERMINALS SILVER AND TERMINAL SURFACES GOLD