Part Details | THYRISTOR SEMICONDUCTOR DEVICE
5961-00-753-0470 A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: C358P, C358P, C358P, 5961-00-753-0470, 00-753-0470, 5961007530470, 007530470
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | OCT 04, 1972 | 00-753-0470 | 33096 ( SEMICONDUCTOR DEVICE, THYRISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-753-0470
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| C358P | 03508 | GENERAL ELECTRIC COSEMI-CONDUCTOR PRODUCTS DEPT |
| C358P | 83781 | NATIONAL ELECTRONICSDIV OF RICHARDSON ELECTRONICS LTD |
| C358P | 66844 | POWEREX, INC |
Technical Data | NSN 5961-00-753-0470
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 0.01 MAXIMUM BREAKOVER VOLTAGE, DC |
| CURRENT RATING PER CHARACTERISTIC | AD80.00 AMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AF2.0 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | METAL |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | ANODE |
| MOUNTING METHOD | TERMINAL |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD W/TERMINAL LUG AND 1 CASE |
| OVERALL LENGTH | 0.515 INCHES MINIMUM AND 0.565 INCHES MAXIMUM |
| OVERALL DIAMETER | 1.600 INCHES MINIMUM AND 1.650 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| END ITEM IDENTIFICATION | SIMULATOR AN/MSQ-T43 |