Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-754-5466 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 1N303A, 1N303A, 1N303A, 1N303A, 3221057P2, 322-1057P2, 1N303A, 1N303A, 5961-00-754-5466, 00-754-5466, 5961007545466, 007545466
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 01, 1962 | 00-754-5466 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-754-5466
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 1N303A | 27622 | BURNS AND TOWNE INC |
| 1N303A | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 1N303A | 12045 | ELECTRONIC TRANSISTORS CORP |
| 1N303A | 16068 | INTERNATIONAL DIODE CORP |
| 322-1057P2 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| 1N303A | 30043 | SOLID STATE DEVICES, INC. |
| 1N303A | 12711 | WESTERN SEMICONDUCTORS DIV |
Technical Data | NSN 5961-00-754-5466
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 125.0 MAXIMUM REVERSE VOLTAGE, PEAK |
| CURRENT RATING PER CHARACTERISTIC | EB0.40 AMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AB150.0 MILLIWATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS AMBIENT AIR |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| NONDEFINITIVE SPEC/STD DATA | 1N303A TYPE |
