Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-754-5816 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: G296502, G-296502, S362G, 5362G, SMB181088, SM-B-181088, 5961-00-754-5816, 00-754-5816, 5961007545816, 007545816
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 01, 1962 | 00-754-5816 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-754-5816
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| G-296502 | 64959 | AMERICAN TELEPHONE AND TELEGRAPH CO |
| S362G | 03877 | GILBERT ENGINEERING CO INC/INCONSUB OF TRANSITRON ELECTRONIC CORP |
| 5362G | 03887 | LIVERMONT INC |
| SM-B-181088 | 80063 | US ARMY COMMUNICATIONS &ELECTRONICS MATERIEL READINESS |
Technical Data | NSN 5961-00-754-5816
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 MAXIMUM REVERSE VOLTAGE, PEAK |
| CURRENT RATING PER CHARACTERISTIC | AF70.00 MILLIAMPERES NOMINAL AND CF400.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AF80.0 MILLIWATTS NOMINAL |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.312 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.300 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.130 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |