Part Details | TRANSISTOR
5961-00-755-4349 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N1156, 2N1156, 2N1156, RELEASE2576, 2N1156, 2N1156, 5181473, 518147-3, 12583011, 1258301-1, 1778877, 9992721, 999272-1, 953NPN, 953, 723099011, 723099-011, 2N1156953, 2N1156-953, TI953, 3520036000, 352-0036-000, 2N1156, 2N1156, 5961-00-755-4349, 00-755-4349, 5961007554349, 007554349
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 01, 1962 | 00-755-4349 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-755-4349
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2N1156 | 99957 | BOWMAR/TIC INCSUB OF BOWMAR INSTRUMENT CORP |
| 2N1156 | 11058 | CSR INDUSTRIES INC |
| 2N1156 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| RELEASE2576 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 2N1156 | 12045 | ELECTRONIC TRANSISTORS CORP |
| 2N1156 | 34156 | FALKOR PARTNERS, LLCDBA SEMICOA |
| 518147-3 | 73030 | HAMILTON SUNDSTRAND CORPORATION |
| 1258301-1 | 55972 | HONEYWELL INTL INCDEFENSE AVIONICS SYSTEMS |
| 1778877 | 10001 | NAVAIR AND NAVSEA MANAGEDORIGINAL DESIGN ACTIVITY DWG NOT |
| 999272-1 | 82577 | RAYTHEON COMPANYDBA RAYTHEON |
| 953NPN | 96214 | RAYTHEON COMPANYDBA RAYTHEON |
| 953 | 96214 | RAYTHEON COMPANYDBA RAYTHEON |
| 723099-011 | 82577 | RAYTHEON COMPANYDBA RAYTHEON |
| 2N1156-953 | 96214 | RAYTHEON COMPANYDBA RAYTHEON |
| TI953 | 96214 | RAYTHEON COMPANYDBA RAYTHEON |
| 352-0036-000 | 13499 | ROCKWELL COLLINS, INC.DBA GOVERNMENT SYSTEMS |
| 2N1156 | 30043 | SOLID STATE DEVICES, INC. |
| 2N1156 | 01295 | TEXAS INSTRUMENTS INCORPORATEDDBA TEXAS INSTRUMENTS |
Technical Data | NSN 5961-00-755-4349
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 120.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 1.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
| CURRENT RATING PER CHARACTERISTIC | AC40.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AB750.0 MILLIWATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.440 INCHES MAXIMUM |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.405 INCHES MAXIMUM |
| OVERALL HEIGHT | 0.215 INCHES MAXIMUM |
| OVERALL WIDTH | 0.315 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |
| SPECIFICATION/STANDARD DATA | 80131-RELESE2576 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |