Part Details | TRANSISTOR
5961-00-760-1116 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: A3100, 10100580A, 5800583942200104, 5800583-942200-104, 65742, 5376831, 537683-1, 65742, 5376831, 537683-1, 40673, 17118171, 1711817-1, 4804401140673, 48044011-40673, 505116, 505-116, 5376831, 537683-1, 0447450000, 044745000, AM2040859, 101402, Q0297, SK00044, 5961-00-760-1116, 00-760-1116, 5961007601116, 007601116
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | APR 07, 1972 | 00-760-1116 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-760-1116
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| A3100 | 81535 | AERONAUTICAL COMMUNICATIONSEQUIPMENT INC |
| 10100580A | 50423 | BALLANTINE LABORATORIES INC |
| 5800583-942200-104 | C0426 | HENSOLDT SENSORS GMBH |
| 65742 | 1MY79 | INTERSIL COMMUNICATIONS INC. |
| 537683-1 | 1MY79 | INTERSIL COMMUNICATIONS INC. |
| 65742 | 34371 | INTERSIL CORPORATIONDIV NA |
| 537683-1 | 34371 | INTERSIL CORPORATIONDIV NA |
| 40673 | 49671 | LOCKHEED MARTIN CORPORATIONDBA LOCKHEED MARTIN |
| 1711817-1 | 49671 | LOCKHEED MARTIN CORPORATIONDBA LOCKHEED MARTIN |
| 48044011-40673 | 06994 | OCEAN APPLIED RESEARCH CORP |
| 505-116 | D8008 | PLATH GMBH |
| 537683-1 | 96214 | RAYTHEON COMPANYDBA RAYTHEON |
| 0447450000 | 12338 | RIIMIC, LLCDBA SUNAIR ELECTRONICS |
| 044745000 | 12338 | RIIMIC, LLCDBA SUNAIR ELECTRONICS |
| AM2040859 | D0894 | ROHDE & SCHWARZ GMBH & CO. KG |
| 101402 | 06811 | SYSTRON DONNER INERTIAL, INC.DBA SYSTRON DONNER INERTIAL |
| Q0297 | 06811 | SYSTRON DONNER INERTIAL, INC.DBA SYSTRON DONNER INERTIAL |
| SK00044 | H0203 | THALES NEDERLANDDBA THALES LAND & JOINT SYSTEMS |
Technical Data | NSN 5961-00-760-1116
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 6.0 MAXIMUM GATE TO SOURCE CUTOFF VOLTAGE AND 20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 20.0 MAXIMUM DRAIN TO GATE VOLTAGE |
| CURRENT RATING PER CHARACTERISTIC | AD50.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AF330.0 MILLIWATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |