Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-763-9529 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: JANTX1N4467A, SR1674, CR0261, CR-0261, 2503676525, 2503676-525, TX1N4467, 610026, 02101819, 02-1018-19, JANTX1N4467, 6622, BUWEPSDWG2557514, MILS19500406, MIL-S-19500/406, MILPRF19500406, MIL-PRF-19500/406, JANTX1N4467, 2557514, 10129868, 1682125, 1682-125, 1N5533, 5961-00-763-9529, 00-763-9529, 5961007639529, 007639529
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | APR 14, 1972 | 00-763-9529 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-763-9529
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| JANTX1N4467A | C7191 | ADELCO ELEKTRONIK GMBH |
| SR1674 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| CR-0261 | 14304 | HARRIS CORPORATIONDBA HARRIS RF COMMUNICATION |
| 2503676-525 | 07187 | HONEYWELL INTERNATIONAL INC.DBA HONEYWELL |
| TX1N4467 | 81350 | JOINT ARMY-NAVY SPECIFICATIONSPROMULGATED BY MILITARY DEPARTMENTS |
| 610026 | 33013 | LOGIMETRICS INC |
| 02-1018-19 | 31435 | LUCAS AEROSPACE POWER EQUIPMENTCORPORATION |
| JANTX1N4467 | 12969 | MICRO USPD INC |
| 6622 | 12954 | MICROSEMI CORP.-SCOTTSDALEDBA MICROSEMI |
| BUWEPSDWG2557514 | 12954 | MICROSEMI CORP.-SCOTTSDALEDBA MICROSEMI |
| MIL-S-19500/406 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| MIL-PRF-19500/406 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| JANTX1N4467 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| 2557514 | 10001 | NAVAIR AND NAVSEA MANAGEDORIGINAL DESIGN ACTIVITY DWG NOT |
| 10129868 | A486G | NIMIKKEISTOKESKUS NCB FINLAND |
| 1682-125 | 31361 | WOODWARD, INC.DBA INDUSTRIAL PRODUCTS GROUP |
| 1N5533 | 31361 | WOODWARD, INC.DBA INDUSTRIAL PRODUCTS GROUP |
Technical Data | NSN 5961-00-763-9529
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 12.0 NOMINAL NOMINAL REGULATOR VOLTAGE |
| VOLTAGE TOLERANCE IN PERCENT | M5.0/P5.0 |
| CURRENT RATING PER CHARACTERISTIC | AS21.00 MILLIAMPERES MAXIMUM AND AS119.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AF1.5 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.800 INCHES MINIMUM AND 1.300 INCHES MAXIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.106 INCHES MINIMUM AND 0.160 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.060 INCHES MINIMUM AND 0.085 INCHES MAXIMUM |
| FUNCTION FOR WHICH DESIGNED | ZENER DIODE |
| TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTING GENERAL TYPE DATA ON CERTAIN ENVIRONMENTAL AND PERFORMANCE REQUIREMENTS AND TEST CONDITIONS THAT ARE SHOWN AS "TYPICAL", "AVERAGE", "NOMINAL", ETC.). |
| SPECIFICATION/STANDARD DATA | 81349-MIL--19500 TO 406 GOVERNMENT SPECIFICATION |