Part Details | TRANSISTOR
5961-00-778-3958 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N1050B, 2N1049B, 2N1050B, 2N1049B, RELEASE3379, 2N1050B, 2N1049B, 25038862, 2503886-2, 2N1050B, 2N1049B, 2N1050B, 2N1049B, 2N1050B, 2N1049B, 2N1050B, 2N1049B, 2N1050B, 2N1049B, 2N1050B, 2N1049B, 5961-00-778-3958, 00-778-3958, 5961007783958, 007783958
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 01, 1960 | 00-778-3958 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-778-3958
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2N1050B | 52333 | API ELECTRONICS, INC.DBA API TECHNOLOGIES CORP |
| 2N1049B | 52333 | API ELECTRONICS, INC.DBA API TECHNOLOGIES CORP |
| 2N1050B | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 2N1049B | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| RELEASE3379 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 2N1050B | 12045 | ELECTRONIC TRANSISTORS CORP |
| 2N1049B | 12045 | ELECTRONIC TRANSISTORS CORP |
| 2503886-2 | 56232 | LOCKHEED MARTIN CORPORATIONDBA LOCKHEED MARTIN |
| 2N1050B | 31338 | SEMITRONICS CORP |
| 2N1049B | 31338 | SEMITRONICS CORP |
| 2N1050B | 07256 | SILICON TRANSISTOR CORPSUB OF BBF INC |
| 2N1049B | 07256 | SILICON TRANSISTOR CORPSUB OF BBF INC |
| 2N1050B | 30045 | SOLID POWER CORP |
| 2N1049B | 30045 | SOLID POWER CORP |
| 2N1050B | 30043 | SOLID STATE DEVICES, INC. |
| 2N1049B | 30043 | SOLID STATE DEVICES, INC. |
| 2N1050B | 01295 | TEXAS INSTRUMENTS INCORPORATEDDBA TEXAS INSTRUMENTS |
| 2N1049B | 01295 | TEXAS INSTRUMENTS INCORPORATEDDBA TEXAS INSTRUMENTS |
| 2N1050B | 34428 | UNITED PAGE INC |
| 2N1049B | 34428 | UNITED PAGE INC |
Technical Data | NSN 5961-00-778-3958
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 120.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 120.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 10.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
| CURRENT RATING PER CHARACTERISTIC | AB500.00 MILLIAMPERES MAXIMUM AND AC750.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AB1.0 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | METAL |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| MOUNTING METHOD | THREADED STUD |
| MOUNTING FACILITY QUANTITY | 1 |
| THREAD SERIES DESIGNATOR | UNC |
| NOMINAL THREAD SIZE | 0.138 INCHES |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.215 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.420 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |
| SPECIFICATION/STANDARD DATA | 80131-RELESE3379 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |