Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-779-4130 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 1N3338B, RELEASE3669, 1N3338B, 5961-00-779-4130, 00-779-4130, 5961007794130, 007794130
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 01, 1960 | 00-779-4130 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-779-4130
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 1N3338B | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| RELEASE3669 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 1N3338B | 12954 | MICROSEMI CORP.-SCOTTSDALEDBA MICROSEMI |
Technical Data | NSN 5961-00-779-4130
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 82.0 MAXIMUM NOMINAL REGULATOR VOLTAGE |
| CURRENT RATING PER CHARACTERISTIC | EB150.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AF50.0 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | THREADED STUD |
| MOUNTING FACILITY QUANTITY | 1 |
| THREAD SERIES DESIGNATOR | UNF |
| NOMINAL THREAD SIZE | 0.250 INCHES |
| TERMINAL TYPE AND QUANTITY | 1 TAB, SOLDER LUG AND 1 THREADED STUD |
| OVERALL LENGTH | 0.450 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.667 INCHES MAXIMUM |
| SPECIFICATION/STANDARD DATA | 80131-RELESE3669 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |