NSN 5961-00-781-2926

Part Details | TRANSISTOR

5961-00-781-2926 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 2N968, 755408709, 755-408709, 2N968, RELEASE3408B, 2N968, 2N968, 5961-00-781-2926, 00-781-2926, 5961007812926, 007812926

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59JAN 01, 196000-781-292620588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-781-2926
Part Number Cage Code Manufacturer
2N9681S926AMERICAN MICROSEMICONDUCTOR INC
755-40870912436BAE SYSTEMS INFORMATION ANDELECTRONIC SYSTEMS INTEGRATION INC.
2N96880131ELECTRONIC INDUSTRIES ASSOCIATION
RELEASE3408B80131ELECTRONIC INDUSTRIES ASSOCIATION
2N96853399GPD OPTOELECTRONICS CORP.DIV GPD OPTOELECTRONICS
2N96850891SEMICONDUCTOR TECHNOLOGY INCDBA S T I
Technical Data | NSN 5961-00-781-2926
Characteristic Specifications
SEMICONDUCTOR MATERIAL GERMANIUM
INTERNAL CONFIGURATION JUNCTION CONTACT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC2.5 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN AND 15.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 15.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH BASE SHORT-CIRCUITED TO EMITTER
CURRENT RATING PER CHARACTERISTICAC200.00 MILLIAMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAB300.0 MILLIWATTS MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT100.0 DEG CELSIUS JUNCTION
INCLOSURE MATERIAL METAL
MOUNTING METHOD TERMINAL
TERMINAL LENGTH0.500 INCHES MINIMUM
TERMINAL CIRCLE DIAMETER0.016 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
OVERALL LENGTH0.188 INCHES NOMINAL
OVERALL DIAMETER0.220 INCHES NOMINAL
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIAL FEATURESJUNCTION PATTERN ARRANGEMENT: PNP