NSN 5961-00-799-8497

Part Details | TRANSISTOR

5961-00-799-8497 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 2N1171, RELEASE 2710, 2N1171, 2N1171, 2N1171, 2N1171, 5961-00-799-8497, 00-799-8497, 5961007998497, 007998497

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59JAN 01, 196200-799-849720588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-799-8497
Part Number Cage Code Manufacturer
2N117180131ELECTRONIC INDUSTRIES ASSOCIATION
RELEASE 271080131ELECTRONIC INDUSTRIES ASSOCIATION
2N117107933FAIRCHILD SEMICONDUCTOR CORPSEMICONDUCTOR DIV HQ
2N117153399GPD OPTOELECTRONICS CORP.DIV GPD OPTOELECTRONICS
2N117150891SEMICONDUCTOR TECHNOLOGY INCDBA S T I
2N117131338SEMITRONICS CORP
Technical Data | NSN 5961-00-799-8497
Characteristic Specifications
SEMICONDUCTOR MATERIAL GERMANIUM
INTERNAL CONFIGURATION JUNCTION CONTACT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 12.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 20.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
CURRENT RATING PER CHARACTERISTICAC400.00 AMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAB170.0 MILLIWATTS MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT100.0 DEG CELSIUS JUNCTION
INCLOSURE MATERIAL METAL
MOUNTING METHOD TERMINAL
TERMINAL LENGTH1.500 INCHES MINIMUM
TERMINAL CIRCLE DIAMETER0.200 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
OVERALL LENGTH0.250 INCHES NOMINAL
OVERALL DIAMETER0.359 INCHES NOMINAL
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIAL FEATURESJUNCTION PATTERN ARRANGEMENT: NPN