Part Details | TRANSISTOR
5961-00-804-7544 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: H5G2, H523861065P1, H52-386-1065P1, 3861065P1, 386-1065P1, 3861065P1, 386-1065P1, 3861065P1, 386-1065P1, H52, 5961-00-804-7544, 00-804-7544, 5961008047544, 008047544
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 01, 1962 | 00-804-7544 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-804-7544
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| H5G2 | 53399 | GPD OPTOELECTRONICS CORP.DIV GPD OPTOELECTRONICS |
| H52-386-1065P1 | 17479 | HONEYWELL INCCOMMERCIAL DIV |
| 386-1065P1 | 54X10 | RAYTHEON COMPANYDBA RAYTHEON |
| 386-1065P1 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| 386-1065P1 | 3B150 | RAYTHEON COMPANYDBA RAYTHEON |
| H52 | 21845 | SOLITRON DEVICES, INC. |
Technical Data | NSN 5961-00-804-7544
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | GERMANIUM |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 28.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN AND 80.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN |
| CURRENT RATING PER CHARACTERISTIC | AC5.00 AMPERES MAXIMUM AND AB0.50 AMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AF34.0 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 100.0 DEG CELSIUS JUNCTION |
| TERMINAL TYPE AND QUANTITY | 3 TAB, SOLDER LUG |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNP |