NSN 5961-00-805-1363

Part Details | TRANSISTOR

5961-00-805-1363 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 2N540, 3520026000, 352-0026-000, 2N540, 2N540, 5961-00-805-1363, 00-805-1363, 5961008051363, 008051363

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59JAN 01, 196200-805-136320588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-805-1363
Part Number Cage Code Manufacturer
2N54080131ELECTRONIC INDUSTRIES ASSOCIATION
352-0026-00013499ROCKWELL COLLINS, INC.DBA GOVERNMENT SYSTEMS
2N54007256SILICON TRANSISTOR CORPSUB OF BBF INC
2N54021845SOLITRON DEVICES, INC.
Technical Data | NSN 5961-00-805-1363
Characteristic Specifications
SEMICONDUCTOR MATERIAL GERMANIUM
INTERNAL CONFIGURATION JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION PNP
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 28.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
CURRENT RATING PER CHARACTERISTICAB500.00 MILLIAMPERES MAXIMUM AND AC3.50 AMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAB10.0 WATTS MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT100.0 DEG CELSIUS JUNCTION
INCLOSURE MATERIAL METAL
MOUNTING METHOD THREADED STUD
MOUNTING FACILITY QUANTITY1
THREAD SERIES DESIGNATOR UNC
NOMINAL THREAD SIZE0.190 INCHES
TERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
OVERALL LENGTH0.360 INCHES NOMINAL
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIFICATION/STANDARD DATA80131-RELESE2121 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION