NSN 5961-00-806-8311

Part Details | TRANSISTOR

5961-00-806-8311 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 2N1182, RELEASE4088, A2218862, A221886-2, 2N1182, 5961-00-806-8311, 00-806-8311, 5961008068311, 008068311

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59JAN 01, 196200-806-831120588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-806-8311
Part Number Cage Code Manufacturer
2N118280131ELECTRONIC INDUSTRIES ASSOCIATION
RELEASE408880131ELECTRONIC INDUSTRIES ASSOCIATION
A221886-206845RAYTHEON COMPANYDBA RAYTHEON
2N118221845SOLITRON DEVICES, INC.
Technical Data | NSN 5961-00-806-8311
Characteristic Specifications
SEMICONDUCTOR MATERIAL GERMANIUM
INTERNAL CONFIGURATION JUNCTION CONTACT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 12.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
CURRENT RATING PER CHARACTERISTICAB1.00 AMPERES MAXIMUM AND AC5.00 AMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAB106.0 WATTS MAXIMUM
INCLOSURE MATERIAL METAL
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE COLLECTOR
MOUNTING METHOD UNTHREADED HOLE
MOUNTING FACILITY QUANTITY2
TERMINAL TYPE AND QUANTITY2 UNINSULATED WIRE LEAD AND 1 CASE
OVERALL LENGTH0.450 INCHES MAXIMUM
OVERALL DIAMETER0.875 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIAL FEATURESJUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA80131-RELESE4088 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION