Part Details | TRANSISTOR
5961-00-809-6585 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N565, 2N565, 5961-00-809-6585, 00-809-6585, 5961008096585, 008096585
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 01, 1962 | 00-809-6585 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-809-6585
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2N565 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 2N565 | 14936 | GENERAL SEMICONDUCTOR INC |
Technical Data | NSN 5961-00-809-6585
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | GERMANIUM |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 25.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 10.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
| CURRENT RATING PER CHARACTERISTIC | AC300.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AB150.00 MILLIWATTS MAXIMUM |
| INCLOSURE MATERIAL | GLASS AND METAL |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | BASE |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.337 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.322 INCHES MINIMUM AND 0.345 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNP |
| SPECIFICATION/STANDARD DATA | 80131-RELESE2171 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |