Part Details | TRANSISTOR
5961-00-810-2763 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N1015C, 2N1015C, RELEASE2700, 2N1015C, 2N1015C, 907D3151, 907D315-1, PC842600000F1, PC842600000F1, 7230608, 723060-8, 7230608, 723060-8, 723060008, 723060-008, 723060008, 723060-008, 2N1015C, 2N1015C, 2N1015C, 2N1015C, 907D3151, 907D315-1, 2N1015C, 907D3151, 907D315-1, 2N1015C, 5961-00-810-2763, 00-810-2763, 5961008102763, 008102763
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 01, 1962 | 00-810-2763 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-810-2763
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2N1015C | 52333 | API ELECTRONICS, INC.DBA API TECHNOLOGIES CORP |
| 2N1015C | 11058 | CSR INDUSTRIES INC |
| RELEASE2700 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 2N1015C | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 2N1015C | 12045 | ELECTRONIC TRANSISTORS CORP |
| 907D315-1 | 99167 | HAMILTON SUNDSTRAND CORPORATION |
| PC842600000F1 | 38597 | LOCKHEED MARTIN CORPORATIONDBA LOCKHEED MARTIN |
| PC842600000F1 | 04939 | LOCKHEED MARTIN CORPORATIONDBA LOCKHEED MARTIN |
| 723060-8 | 82577 | RAYTHEON COMPANYDBA RAYTHEON |
| 723060-8 | 05869 | RAYTHEON COMPANYDBA RAYTHEON |
| 723060-008 | 82577 | RAYTHEON COMPANYDBA RAYTHEON |
| 723060-008 | 05869 | RAYTHEON COMPANYDBA RAYTHEON |
| 2N1015C | 07256 | SILICON TRANSISTOR CORPSUB OF BBF INC |
| 2N1015C | 21873 | SLATER ELECTRIC INC |
| 2N1015C | 30045 | SOLID POWER CORP |
| 2N1015C | 30043 | SOLID STATE DEVICES, INC. |
| 907D315-1 | 83843 | SUNDSTRAND CORPELECTRIC POWER SYSTEMS DIV |
| 2N1015C | 79500 | WESTINGHOUSE ELECTRIC CORP |
| 907D315-1 | 79500 | WESTINGHOUSE ELECTRIC CORP |
| 2N1015C | 05277 | WESTINGHOUSE ELECTRIC CORPSEMICONDUCTOR DIV |
Technical Data | NSN 5961-00-810-2763
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| INTERNAL JUNCTION CONFIGURATION | NPN |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 150.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN |
| CURRENT RATING PER CHARACTERISTIC | AC7.50 AMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AB150.0 WATTS MAXIMUM |
| TERMINAL TYPE AND QUANTITY | 1 UNINSULATED WIRE LEAD AND 2 SOLDER STUD |
| OVERALL DIAMETER | 1.280 INCHES MAXIMUM |
| OVERALL HEIGHT | 0.560 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIFICATION/STANDARD DATA | 80131-FIA2700 PROFESSIONAL/INDUSTRIAL ASSOCIATION STANDARD |