Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-811-4756 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 1N227A, 1N227A, JAN1N227, 1N227A, 5961-00-811-4756, 00-811-4756, 5961008114756, 008114756
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 01, 1962 | 00-811-4756 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-811-4756
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 1N227A | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 1N227A | 03877 | GILBERT ENGINEERING CO INC/INCONSUB OF TRANSITRON ELECTRONIC CORP |
| JAN1N227 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| 1N227A | 99942 | N A P SMD TECHNOLOGY INC |
Technical Data | NSN 5961-00-811-4756
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 12.8 MAXIMUM NOMINAL REGULATOR VOLTAGE |
| CURRENT RATING PER CHARACTERISTIC | EB200.00 MICROAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AF150.0 MILLIWATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS AMBIENT AIR |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.125 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.210 INCHES MINIMUM AND 0.230 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIFICATION/STANDARD DATA | 80131-RELESE3139 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |