Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-812-9983 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 26000260, 2600-0260, 1N643A, RELEASE2648, 1N643A, 26000260, 2600-0260, 720608002, 720608-002, 720608002, 720608-002, 5961-00-812-9983, 00-812-9983, 5961008129983, 008129983
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 01, 1960 | 00-812-9983 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-812-9983
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2600-0260 | 72314 | BAE SYSTEMS INFORMATION ANDELECTRONIC SYSTEMS INTEGRATION I |
| 1N643A | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| RELEASE2648 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 1N643A | 73293 | L-3 COMMUNICATIONS ELECTRONTECHNOLOGIES, INC. |
| 2600-0260 | 79318 | MEGGITT (NORTH HOLLYWOOD), INC. |
| 720608-002 | 82577 | RAYTHEON COMPANYDBA RAYTHEON |
| 720608-002 | 05869 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-00-812-9983
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 200.0 MAXIMUM REVERSE VOLTAGE, PEAK |
| CURRENT RATING PER CHARACTERISTIC | CH15.00 MICROAMPERES MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS AMBIENT AIR |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.000 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.265 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.105 INCHES NOMINAL |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIFICATION/STANDARD DATA | 80131-RELESE2648 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |