Part Details | TRANSISTOR
5961-00-815-5604 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N1229, RELEASE2674, 2N1229, 2N1229, 5961-00-815-5604, 00-815-5604, 5961008155604, 008155604
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 01, 1961 | 00-815-5604 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-815-5604
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2N1229 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| RELEASE2674 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 2N1229 | 73293 | L-3 COMMUNICATIONS ELECTRONTECHNOLOGIES, INC. |
| 2N1229 | 82577 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-00-815-5604
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 15.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 15.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 15.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
| POWER RATING PER CHARACTERISTIC | AB400.0 MILLIWATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 165.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.260 INCHES NOMINAL |
| OVERALL DIAMETER | 0.362 INCHES NOMINAL |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNP |
| SPECIFICATION/STANDARD DATA | 80131-RELESE2674 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |