NSN 5961-00-815-5605

Part Details | TRANSISTOR

5961-00-815-5605 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 2N1244, RELEASE2674, 2N1244, 72302510REVA, 723025-10REVA, 72302510REVA, 723025-10REVA, 5961-00-815-5605, 00-815-5605, 5961008155605, 008155605

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59JAN 01, 196100-815-560520588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-815-5605
Part Number Cage Code Manufacturer
2N124480131ELECTRONIC INDUSTRIES ASSOCIATION
RELEASE267480131ELECTRONIC INDUSTRIES ASSOCIATION
2N124400816PALOMAR PRODUCTS, INC.
723025-10REVA82577RAYTHEON COMPANYDBA RAYTHEON
723025-10REVA05869RAYTHEON COMPANYDBA RAYTHEON
Technical Data | NSN 5961-00-815-5605
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION JUNCTION CONTACT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC110.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 110.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN AND 110.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
TRANSFER RATIO32.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT200.0 DEG CELSIUS JUNCTION
INCLOSURE MATERIAL METAL
MOUNTING METHOD TERMINAL
TERMINAL LENGTH0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
OVERALL LENGTH0.691 INCHES NOMINAL
OVERALL DIAMETER0.342 INCHES NOMINAL
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIAL FEATURESJUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA80131-RELESE2674 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION