Part Details | TRANSISTOR
5961-00-819-5925 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N638B, RELEASE 2210, 2N638B, 5961-00-819-5925, 00-819-5925, 5961008195925, 008195925
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 01, 1962 | 00-819-5925 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-819-5925
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2N638B | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| RELEASE 2210 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 2N638B | 53399 | GPD OPTOELECTRONICS CORP.DIV GPD OPTOELECTRONICS |
Technical Data | NSN 5961-00-819-5925
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | GERMANIUM |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 5.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC |
| CURRENT RATING PER CHARACTERISTIC | AE3.00 AMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AB25.0 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 100.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | METAL |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 2 |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD AND 1 CASE |
| OVERALL LENGTH | 0.375 INCHES NOMINAL |
| OVERALL DIAMETER | 0.875 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNP |
| SPECIFICATION/STANDARD DATA | 80131-RELESE2210 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |