Part Details | TRANSISTOR
5961-00-823-9972 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 9136C2015, 5961008239972, 9136C2015, 2N3599, 152714, 152714, 152714, 2N3599, 152714, SPN5010, 86SV355, 2N3599, 10558278, 5961-00-823-9972, 00-823-9972, 5961008239972, 008239972
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | AUG 16, 1967 | 00-823-9972 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-823-9972
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 9136C2015 | 94117 | BAE SYSTEMS INFORMATION ANDELECTRONIC SYSTEMS INTEGRATION INC. |
| 5961008239972 | A00AM | E.C.A ETABLISSEMENT CENTRALDESAPPROVISIONNEMENTS DES FORCES |
| 9136C2015 | 87557 | LOCKHEED CORPLOCKHEED ELECTRONICS CO INC |
| 2N3599 | 43611 | MICROSEMI CORP.- MASSACHUSETTSDBA MICROSEMI-LAWRENCE |
| 152714 | 54X10 | RAYTHEON COMPANYDBA RAYTHEON |
| 152714 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| 152714 | 3B150 | RAYTHEON COMPANYDBA RAYTHEON |
| 2N3599 | 31338 | SEMITRONICS CORP |
| 152714 | 31338 | SEMITRONICS CORP |
| SPN5010 | 07256 | SILICON TRANSISTOR CORPSUB OF BBF INC |
| 86SV355 | 21845 | SOLITRON DEVICES, INC. |
| 2N3599 | 21845 | SOLITRON DEVICES, INC. |
| 10558278 | 19200 | US ARMY ARDEC RDECOM |
Technical Data | NSN 5961-00-823-9972
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 8.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN AND 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN |
| CURRENT RATING PER CHARACTERISTIC | AC20.00 AMPERES MAXIMUM AND AB5.00 AMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AB100.0 WATTS MAXIMUM |
| TRANSFER RATIO | 225.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS CASE |
| INCLOSURE MATERIAL | METAL |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-63 |
| MOUNTING METHOD | THREADED STUD |
| MOUNTING FACILITY QUANTITY | 1 |
| THREAD SERIES DESIGNATOR | UNF |
| NOMINAL THREAD SIZE | 0.312 INCHES |
| TERMINAL TYPE AND QUANTITY | 3 TAB, SOLDER LUG |
| OVERALL LENGTH | 0.535 INCHES MAXIMUM |
| OVERALL WIDTH ACROSS FLATS | 0.875 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |