NSN 5961-00-824-5184

Part Details | TRANSISTOR

5961-00-824-5184 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 2N3071, RELEASE4584, 2N3071, 2N3071, 2N3071, 2N3071, 2N3071, 2N3071, 5961-00-824-5184, 00-824-5184, 5961008245184, 008245184

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59AUG 21, 196700-824-518420588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-824-5184
Part Number Cage Code Manufacturer
2N307180131ELECTRONIC INDUSTRIES ASSOCIATION
RELEASE458480131ELECTRONIC INDUSTRIES ASSOCIATION
2N307127014NATIONAL SEMICONDUCTOR CORPORATION
2N307117856SILICONIX INCORPORATEDDIV SILICONIX
2N307121845SOLITRON DEVICES, INC.
2N307115818TELCOM SEMICONDUCTOR INC
2N307116170TELEDYNE TECHNOLOGIES INCORPORATEDDBA TELEDYNE MICROELECTRONIC
2N307101295TEXAS INSTRUMENTS INCORPORATEDDBA TEXAS INSTRUMENTS
Technical Data | NSN 5961-00-824-5184
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION FIELD EFFECT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC50.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
CURRENT RATING PER CHARACTERISTICAK100.00 MILLIAMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAG350.0 MILLIWATTS MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT200.0 DEG CELSIUS CASE
INCLOSURE MATERIAL METAL
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE GATE
MOUNTING METHOD TERMINAL
TERMINAL LENGTH0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
OVERALL LENGTH0.210 INCHES MAXIMUM
OVERALL DIAMETER0.230 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIFICATION/STANDARD DATA80131-RELESE4584 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION