Part Details | TRANSISTOR
5961-00-824-5202 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 4011392, 401139-2, 2N4392, 082038001, 2N4392, RELEASE5345, SPF4932, SPF493-2, 14449101, 144491-01, ED7446642, ED744664-2, 18550386, 1855-0386, 5961PL0627160, 2N4392, 9846370001, 98463-70001, 1329811, 132981-1, 67C7000183, 67C700018-3, 2N4392, 046760, 2N4392, 251296, 7230966, 723096-6, 723096006, 723096-006, 10865201, 108652-01, 2N4392E3, 2N4392, 2N4392, 2N4392, 2N4392, 44541 00930, 2N4392, A3177162, 417498586000, 417-4-98586-000, 5961-00-824-5202, 00-824-5202, 5961008245202, 008245202
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | AUG 21, 1967 | 00-824-5202 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-824-5202
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 401139-2 | 20284 | AIMTRON SYSTEMS LLCDBA TARGET |
| 2N4392 | 55464 | CENTRAL SEMICONDUCTOR CORP. |
| 082038001 | 55901 | DARE ELECTRONICS, INC. |
| 2N4392 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| RELEASE5345 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| SPF493-2 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| 144491-01 | 35351 | GE AVIATION SYSTEMS LLC |
| ED744664-2 | 73030 | HAMILTON SUNDSTRAND CORPORATION |
| 1855-0386 | 28480 | HEWLETT-PACKARD COMPANYDBA HP |
| 5961PL0627160 | 9009H | INSPEKTORAT WSPARCIA SIL ZBROJNYCH |
| 2N4392 | 32293 | INTERSIL INCSUB OF GENERAL ELECTRIC CO |
| 98463-70001 | K0662 | LEONARDO MW LTD |
| 132981-1 | 09205 | LOCKHEED MARTIN CORPELECTRONICS AND MISSILES DIV |
| 67C700018-3 | 02106 | MRL INC |
| 2N4392 | 27014 | NATIONAL SEMICONDUCTOR CORPORATION |
| 046760 | 22915 | NORTHROP GRUMMAN CORPELECTRONIC SYSTEMS DEFENSIVE SYSTEM |
| 2N4392 | D2540 | PHILIPSSEMICONDUCTORSUNTERNEHMENSBEREICH |
| 251296 | 82577 | RAYTHEON COMPANYDBA RAYTHEON |
| 723096-6 | 05869 | RAYTHEON COMPANYDBA RAYTHEON |
| 723096-006 | 05869 | RAYTHEON COMPANYDBA RAYTHEON |
| 108652-01 | 14345 | ROLM CORPMIL SPEC COMPUTERS |
| 2N4392E3 | 17856 | SILICONIX INCORPORATEDDIV SILICONIX |
| 2N4392 | 17856 | SILICONIX INCORPORATEDDIV SILICONIX |
| 2N4392 | 21845 | SOLITRON DEVICES, INC. |
| 2N4392 | 15818 | TELCOM SEMICONDUCTOR INC |
| 2N4392 | 01295 | TEXAS INSTRUMENTS INCORPORATEDDBA TEXAS INSTRUMENTS |
| 44541 00930 | D8385 | THALES DEUTSCHLAND GMBHDBA VERTEIDIGUNGSSYSTEME SEL GMBH |
| 2N4392 | 05397 | UNION CARBIDE CORP MATERIALS SYSTEMSDIV |
| A3177162 | 80063 | US ARMY COMMUNICATIONS &ELECTRONICS MATERIEL READINESS |
| 417-4-98586-000 | K7785 | ZARLINK SEMICONDUCTOR LIMITED |
Technical Data | NSN 5961-00-824-5202
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 40.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 40.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE |
| CURRENT RATING PER CHARACTERISTIC | AK50.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AG1.8 WATTS MAXIMUM |
| INCLOSURE MATERIAL | METAL |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | GATE |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.210 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.230 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIFICATION/STANDARD DATA | 80131-RELESE5345 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |