NSN 5961-00-824-7516

Part Details | THYRISTOR SEMICONDUCTOR DEVICE

5961-00-824-7516 A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: C50E, 40139860701, 4013986-0701, T510058007AQ, 809K, 5961-00-824-7516, 00-824-7516, 5961008247516, 008247516

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59AUG 23, 196700-824-751633096 ( SEMICONDUCTOR DEVICE, THYRISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-824-7516
Part Number Cage Code Manufacturer
C50E09214GENERAL ELECTRIC COSEMI-CONDUCTOR PRODUCTS DEPT
4013986-070106845RAYTHEON COMPANYDBA RAYTHEON
T510058007AQ05277WESTINGHOUSE ELECTRIC CORPSEMICONDUCTOR DIV
809K05277WESTINGHOUSE ELECTRIC CORPSEMICONDUCTOR DIV
Technical Data | NSN 5961-00-824-7516
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION JUNCTION CONTACT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC500.0 MAXIMUM BREAKOVER VOLTAGE, DC
CURRENT RATING PER CHARACTERISTICCG1000.00 AMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAE500.0 MILLIWATTS MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT125.0 DEG CELSIUS JUNCTION
INCLOSURE MATERIAL METAL
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE ANODE
MOUNTING METHOD THREADED STUD
MOUNTING FACILITY QUANTITY1
THREAD SERIES DESIGNATOR UNF
NOMINAL THREAD SIZE0.500 INCHES
TERMINAL TYPE AND QUANTITY3 TAB, SOLDER LUG AND 1 THREADED STUD
OVERALL LENGTH3.327 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS1.063 INCHES NOMINAL
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIAL FEATURESJUNCTION PATTERN ARRANGEMENT: PNPN