NSN 5961-00-824-7994

Part Details | UNITIZED SEMICONDUCTOR DEVICE RECTIFIER

5961-00-824-7994 Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see RECTIFIER, SEMICONDUCTOR DEVICE. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see INTEGRATED CIRCUIT (as modified). Excludes SEMICONDUCTOR DEVICES, UNITIZED; SEMICONDUCTOR DEVICE ASSEMBLY; and RECTIFIER NETWORK, UNITIZED.

Alternate Parts: DR50709H, 579R178H01, TPF100W, 5961-00-824-7994, 00-824-7994, 5961008247994, 008247994

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59AUG 16, 196700-824-799462108 ( RECTIFIER, SEMICONDUCTOR DEVICE, UNITIZED )
REFERENCE DRAWINGS & PICTURES

BRIDGE 3 PHASE

Cross Reference | NSN 5961-00-824-7994
Part Number Cage Code Manufacturer
DR50709H12954MICROSEMI CORP.-SCOTTSDALEDBA MICROSEMI
579R178H0197942NORTHROP GRUMMAN SYSTEMS CORPORATIONDIV NORTHROP GRUMMAN SYSTEMS
TPF100W21845SOLITRON DEVICES, INC.
Technical Data | NSN 5961-00-824-7994
Characteristic Specifications
MATERIAL SILICON
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC10000.0 PEAK INVERSE VOLTAGE
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC6.00 AMPERES REPETITIVE PEAK FORWARD CURRENT
MOUNTING METHOD SURFACE
TERMINAL TYPE AND QUANTITY5 TURRET
CIRCUIT CONNECTION STYLE DESIGNATOR BRIDGE 3 PHASE
OPERATING TEMP RANGE-65.0 TO +150.0 DEG CELSIUS
OVERALL LENGTH5.620 INCHES NOMINAL
OVERALL WIDTH2.810 INCHES MAXIMUM
OVERALL HEIGHT0.460 INCHES NOMINAL