Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-826-1803 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 10211732, 1021173-2, 10211732, 1021173-2, GS810AR1, 5025849, 5025-849, 1N916, 1N916, 5961-00-826-1803, 00-826-1803, 5961008261803, 008261803
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 01, 1962 | 00-826-1803 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-826-1803
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 1021173-2 | 11447 | L3 TECHNOLOGIES, INC.DBA COMMUNICATION SYSTEMS - EAST |
| 1021173-2 | 49671 | LOCKHEED MARTIN CORPORATIONDBA LOCKHEED MARTIN |
| GS810AR1 | 26512 | NORTHROP GRUMMAN SYSTEMS CORPORATIONDIV MISSION SYSTEMS |
| 5025-849 | 05869 | RAYTHEON COMPANYDBA RAYTHEON |
| 1N916 | 93332 | SYLVANIA ELECTRIC PRODUCTS INCSEMICONDUCTOR PRODUCTS DIV |
| 1N916 | 01295 | TEXAS INSTRUMENTS INCORPORATEDDBA TEXAS INSTRUMENTS |
Technical Data | NSN 5961-00-826-1803
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 100.0 MAXIMUM REVERSE VOLTAGE, PEAK |
| CURRENT RATING PER CHARACTERISTIC | AF10.00 MILLIAMPERES MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS AMBIENT AIR |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.300 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.150 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |