Part Details | TRANSISTOR
5961-00-828-0719 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: A55032960, A55032-960, V132564, A55032960, A55032-960, MJE340, 7210085003, 7210085-003, Q62702L47F6, Q62702-L47-F6, Q62702L47F6, Q62702-L47-F6, PR11316, NT340, MJE340, BD232, SCUL00340, V22916X2A27, V22916-X2-A27, 294227, 294-227, 411724016, 41172-401-6, 151031100, 151-0311-00, 062055, 062-055, 243651, 243651, 5961-00-828-0719, 00-828-0719, 5961008280719, 008280719
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | AUG 30, 1967 | 00-828-0719 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-828-0719
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| A55032-960 | KC1M9 | BAE SYSTEMS MARITIME SERVICESLIMITED |
| V132564 | B1224 | BARCO NV |
| A55032-960 | K4556 | BRITISH AEROSPACE DEFENCE SYSTEMSLTD T/A BAE SYSTEMS |
| MJE340 | 55464 | CENTRAL SEMICONDUCTOR CORP. |
| 7210085-003 | 05157 | COHU, INC.DBA COHU ELECTRONIC'S DIVISION |
| Q62702-L47-F6 | C4751 | EPCOS AG |
| Q62702-L47-F6 | D1180 | EPCOS AG ABT. PR ROE K PM |
| PR11316 | 09272 | FESTO DIDACTIC INC. |
| NT340 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| MJE340 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| BD232 | F4202 | GENTER SUCC ANCIENS ETS E. DEBETTEM |
| SCUL00340 | F6512 | MORS TECHNOLOGIES |
| V22916-X2-A27 | C0363 | NOKIA SOLUTIONS AND NETWORKS GMBH&CO. KG |
| 294-227 | K2504 | RS COMPONENTS LIMITED |
| 41172-401-6 | K4547 | SIEMENS AIR TRAFFIC MANAGEMENT |
| 151-0311-00 | K3976 | TEKTRONIX UK LTD |
| 062-055 | 23042 | TRILITHIC, INC. |
| 243651 | U3979 | ULTRA ELECTRONICS LTD ELECTRONICS DIISION |
| 243651 | K0653 | ULTRA ELECTRONICS PRECISION AIR&LAND SYSTEMS |
Technical Data | NSN 5961-00-828-0719
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 300.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 3.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
| CURRENT RATING PER CHARACTERISTIC | AC500.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AG20.8 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | PLASTIC |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 1 |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.635 INCHES MINIMUM AND 0.645 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.495 INCHES MINIMUM AND 0.505 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |