NSN 5961-00-833-7100

Part Details | DIODE SEMICONDUCTOR DEVICE

5961-00-833-7100 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.

Alternate Parts: 1N2621A, 720670034, 720670-034, 720670034, 720670-034, 5961-00-833-7100, 00-833-7100, 5961008337100, 008337100

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59JAN 01, 196100-833-710020589 ( SEMICONDUCTOR DEVICE, DIODE )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-833-7100
Part Number Cage Code Manufacturer
1N2621A80131ELECTRONIC INDUSTRIES ASSOCIATION
720670-03482577RAYTHEON COMPANYDBA RAYTHEON
720670-03405869RAYTHEON COMPANYDBA RAYTHEON
Technical Data | NSN 5961-00-833-7100
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC9.3 MAXIMUM NOMINAL REGULATOR VOLTAGE
CURRENT RATING PER CHARACTERISTICEB15.00 MILLIAMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAF750.0 MILLIWATTS MAXIMUM
INCLOSURE MATERIAL GLASS
MOUNTING METHOD TERMINAL
TERMINAL LENGTH1.350 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY2 UNINSULATED WIRE LEAD
OVERALL LENGTH0.350 INCHES MAXIMUM
OVERALL DIAMETER0.225 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIFICATION/STANDARD DATA80131-RELESE2986 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION