Part Details | TRANSISTOR
5961-00-837-6443 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N3233, 2N3233, 2N3233, 2N3233, RELEASE4716, 2N3233, 2N3233, 2N3233, 2N3233, 2N3233, 2N3233, 2N3233, 5469035, 5469-035, 2N3233, 2N3233, 2N3233, 2N3233, 2N3233, 5961-00-837-6443, 00-837-6443, 5961008376443, 008376443
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | DEC 07, 1966 | 00-837-6443 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-837-6443
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2N3233 | 83298 | ALLIED SIGNAL INCAEROSPACE EQUIPMENT SYSTEMS |
| 2N3233 | 52333 | API ELECTRONICS, INC.DBA API TECHNOLOGIES CORP |
| 2N3233 | 11058 | CSR INDUSTRIES INC |
| 2N3233 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| RELEASE4716 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 2N3233 | 12045 | ELECTRONIC TRANSISTORS CORP |
| 2N3233 | 07263 | FAIRCHILD SEMICONDUCTOR CORP |
| 2N3233 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| 2N3233 | 07595 | HUG ELECTRONICS CORP |
| 2N3233 | 64039 | HYBRID SEMICONDUCTORS & ELECTRONICSINC |
| 2N3233 | 33178 | MICROSEMI PPC INC |
| 2N3233 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| 5469-035 | 05869 | RAYTHEON COMPANYDBA RAYTHEON |
| 2N3233 | 21873 | SLATER ELECTRIC INC |
| 2N3233 | 30045 | SOLID POWER CORP |
| 2N3233 | 30043 | SOLID STATE DEVICES, INC. |
| 2N3233 | 21845 | SOLITRON DEVICES, INC. |
| 2N3233 | 05277 | WESTINGHOUSE ELECTRIC CORPSEMICONDUCTOR DIV |
Technical Data | NSN 5961-00-837-6443
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 110.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 4.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN |
| CURRENT RATING PER CHARACTERISTIC | AB3.00 AMPERES MAXIMUM AND AC7.50 AMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AB117.0 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS CASE |
| INCLOSURE MATERIAL | METAL |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 2 |
| TERMINAL TYPE AND QUANTITY | 2 PIN AND 1 CASE |
| OVERALL LENGTH | 1.547 INCHES NOMINAL |
| OVERALL HEIGHT | 0.420 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |
| SPECIFICATION/STANDARD DATA | 80131-RELESE4716 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |