NSN 5961-00-837-9740

Part Details | TRANSISTOR

5961-00-837-9740 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 2N630, 2N630, RELEASE2985, 2N630, 2N630, 2N630, 5961-00-837-9740, 00-837-9740, 5961008379740, 008379740

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59JAN 01, 196200-837-974020588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-837-9740
Part Number Cage Code Manufacturer
2N63001364ALLIED ELECTRONICS INC SUB OFHALL-MARK ELECTRONICS CORP
2N63080131ELECTRONIC INDUSTRIES ASSOCIATION
RELEASE298580131ELECTRONIC INDUSTRIES ASSOCIATION
2N63004713FREESCALE SEMICONDUCTOR, INC.
2N6305V1P1ON SEMICONDUCTOR CORPORATION
2N63021845SOLITRON DEVICES, INC.
Technical Data | NSN 5961-00-837-9740
Characteristic Specifications
SEMICONDUCTOR MATERIAL GERMANIUM
INTERNAL CONFIGURATION JUNCTION CONTACT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 50.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
CURRENT RATING PER CHARACTERISTICAB10.00 AMPERES MAXIMUM AND AC10.00 AMPERES MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT100.0 DEG CELSIUS JUNCTION
INCLOSURE MATERIAL METAL
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE COLLECTOR
MOUNTING METHOD UNTHREADED HOLE
MOUNTING FACILITY QUANTITY2
TERMINAL TYPE AND QUANTITY2 UNINSULATED WIRE LEAD AND 1 CASE
OVERALL LENGTH0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
OVERALL DIAMETER0.875 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIAL FEATURESJUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA80131-RELESE2985 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION