NSN 5961-00-838-8512

Part Details | TRANSISTOR

5961-00-838-8512 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 2N2148, 2N2148, RELEASE4089, 2N2148, 2N2148, 33400004A, 334-00-004A, 5961-00-838-8512, 00-838-8512, 5961008388512, 008388512

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59DEC 16, 196600-838-851220588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-838-8512
Part Number Cage Code Manufacturer
2N214815476COMPAQ FEDERAL LLC
2N214880131ELECTRONIC INDUSTRIES ASSOCIATION
RELEASE408980131ELECTRONIC INDUSTRIES ASSOCIATION
2N214834371INTERSIL CORPORATIONDIV NA
2N214803860LAU TECHNOLOGIESDIV N/A
334-00-004A01205LOGETRONICS CORPORATION
Technical Data | NSN 5961-00-838-8512
Characteristic Specifications
SEMICONDUCTOR MATERIAL GERMANIUM
INTERNAL CONFIGURATION JUNCTION CONTACT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 1.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
CURRENT RATING PER CHARACTERISTICAB1.00 AMPERES MAXIMUM AND AC5.00 AMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAB12.0 WATTS MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT100.0 DEG CELSIUS JUNCTION
INCLOSURE MATERIAL METAL
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE COLLECTOR
MOUNTING METHOD UNTHREADED HOLE
MOUNTING FACILITY QUANTITY2
TERMINAL TYPE AND QUANTITY2 UNINSULATED WIRE LEAD AND 1 CASE
OVERALL LENGTH0.375 INCHES NOMINAL
OVERALL DIAMETER0.875 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIAL FEATURESJUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA80131-RELESE4089 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION