Part Details | TRANSISTOR
5961-00-840-5385 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: DMS 80068B, 7297021, 72306023REVD, 723060-23REVD, 72306023, 723060-23, 5961-00-840-5385, 00-840-5385, 5961008405385, 008405385
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | DEC 23, 1966 | 00-840-5385 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-840-5385
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| DMS 80068B | 16236 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| 7297021 | 16758 | GENERAL MOTORS CORPDELCO ELECTRONICS DIV |
| 723060-23REVD | 05869 | RAYTHEON COMPANYDBA RAYTHEON |
| 723060-23 | 05869 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-00-840-5385
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 400.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN AND 400.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN |
| CURRENT RATING PER CHARACTERISTIC | AC2.50 AMPERES MAXIMUM AND AB1.00 AMPERES MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | METAL |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-41 |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 2 |
| TERMINAL TYPE AND QUANTITY | 2 TAB, SOLDER LUG AND 1 CASE |
| OVERALL LENGTH | 1.573 INCHES NOMINAL |
| OVERALL HEIGHT | 0.450 INCHES MAXIMUM |
| OVERALL WIDTH | 1.050 INCHES NOMINAL |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |