Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-842-6181 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: JAN1N3018BA, 530125, 0050240311, 231051056, 1N3018B, 1N3018A, SV1011, 1N1522A, MZ82T10, MZ8-2T10, 1N3018A, 1N3018B, MILS19500115B, MILS19500-115B, MILPRF19500115, MIL-PRF-19500/115, JAN1N5237B, JAN1N5237A, JAN1N3018B1, JAN1N3018B-1, JAN1N3018B, 4178600173, 4178600-173, 10882201, 108822-01, 5961-00-842-6181, 00-842-6181, 5961008426181, 008426181
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 01, 1962 | 00-842-6181 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-842-6181
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| JAN1N3018BA | C7191 | ADELCO ELEKTRONIK GMBH |
| 530125 | 04901 | BOONTON ELECTRONICS CORPORATIONDIV BOONTON ELECTRONICS |
| 0050240311 | 34010 | CONTROL DATA SYSTEMS INCCONTRACTS DEPT |
| 231051056 | 55901 | DARE ELECTRONICS, INC. |
| 1N3018B | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| 1N3018A | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| SV1011 | 03877 | GILBERT ENGINEERING CO INC/INCONSUB OF TRANSITRON ELECTRONIC CORP |
| 1N1522A | 81483 | INFINEON TECHNOLOGIES AMERICAS CORP.DBA I R |
| MZ8-2T10 | 81483 | INFINEON TECHNOLOGIES AMERICAS CORP.DBA I R |
| 1N3018A | 07688 | JOINT ELECTRON DEVICE ENGINEERINGCOUNCIL |
| 1N3018B | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| MILS19500-115B | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| MIL-PRF-19500/115 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| JAN1N5237B | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| JAN1N5237A | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| JAN1N3018B-1 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| JAN1N3018B | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| 4178600-173 | 05869 | RAYTHEON COMPANYDBA RAYTHEON |
| 108822-01 | 14345 | ROLM CORPMIL SPEC COMPUTERS |
Technical Data | NSN 5961-00-842-6181
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 8.2 NOMINAL NOMINAL REGULATOR VOLTAGE |
| VOLTAGE TOLERANCE IN PERCENT | M5.0/P5.0 |
| CURRENT RATING PER CHARACTERISTIC | AS31.00 MILLIAMPERES NOMINAL AND EA115.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AF1.0 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
| INCLOSURE MATERIAL | METAL |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | CATHODE |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.195 INCHES MINIMUM AND 0.350 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.215 INCHES MINIMUM AND 0.265 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| TEST DATA DOCUMENT | 81349-MIL-PRF-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTING GENERAL TYPE DATA ON CERTAIN ENVIRONMENTAL AND PERFORMANCE REQUIREMENTS AND TEST CONDITIONS THAT ARE SHOWN AS "TYPICAL", "AVERAGE", "NOMINAL", ETC.). |
| SPECIFICATION/STANDARD DATA | 81349-MIL--19500 TO 115 GOVERNMENT SPECIFICATION |