Part Details | TRANSISTOR
5961-00-843-1676 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N3546, 2N3546A, 2N3546, 200874701, 200874-701, 200874001, 200874-001, 943731001, 943731-001, 250123546001, 250-123546-001, 250123546, 250-123546, 5961008431676, RELEASE4803, 2N3546, 2N3546, 2N3546, 2N3546, 70943731001, 70943731-001, 2N3546, 7528149P1, 2N3546, 2N3546, 2N3546, 2N3546, 2N3546, 2N3546, 2N3546, Q0192, SMA586442, SMA989305, SM-A-989305, 5961-00-843-1676, 00-843-1676, 5961008431676, 008431676
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | SEP 22, 1967 | 00-843-1676 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-843-1676
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2N3546 | C7191 | ADELCO ELEKTRONIK GMBH |
| 2N3546A | C7191 | ADELCO ELEKTRONIK GMBH |
| 2N3546 | 34335 | ADVANCED MICRO DEVICES, INC.DBA A M D |
| 200874-701 | 81413 | BAE SYSTEMS INFORMATION ANDELECTRONIC SYSTEMS INTEGRATION I |
| 200874-001 | 81413 | BAE SYSTEMS INFORMATION ANDELECTRONIC SYSTEMS INTEGRATION I |
| 943731-001 | 53178 | BULL HN INFORMATION SYSTEMS INC |
| 250-123546-001 | 20886 | COMPRO COMPUTER SERVICES, INC.DBA COMPRO |
| 250-123546 | 20886 | COMPRO COMPUTER SERVICES, INC.DBA COMPRO |
| 5961008431676 | A00AM | E.C.A ETABLISSEMENT CENTRALDESAPPROVISIONNEMENTS DES FORCES |
| RELEASE4803 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 2N3546 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 2N3546 | 07263 | FAIRCHILD SEMICONDUCTOR CORP |
| 2N3546 | 34156 | FALKOR PARTNERS, LLCDBA SEMICOA |
| 2N3546 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| 70943731-001 | 33322 | GETRONICS GOVERNMENT SOLUTIONS LLC |
| 2N3546 | 16068 | INTERNATIONAL DIODE CORP |
| 7528149P1 | 99971 | LOCKHEED MARTIN CORPNAVAL ELECTRONICS & SURVEILLANCE |
| 2N3546 | 89507 | MOTOROLA AVIATION ELECTRONICS INC |
| 2N3546 | 12040 | NATIONAL SEMICONDUCTOR CORP |
| 2N3546 | 02929 | NEWARK ELECTRONICS CORPORATIONDBA NEWARK |
| 2N3546 | 3B150 | RAYTHEON COMPANYDBA RAYTHEON |
| 2N3546 | 54X10 | RAYTHEON COMPANYDBA RAYTHEON |
| 2N3546 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| 2N3546 | 30043 | SOLID STATE DEVICES, INC. |
| Q0192 | 06811 | SYSTRON DONNER INERTIAL, INC.DBA SYSTRON DONNER INERTIAL |
| SMA586442 | 80063 | US ARMY COMMUNICATIONS &ELECTRONICS MATERIEL READINESS |
| SM-A-989305 | 80063 | US ARMY COMMUNICATIONS &ELECTRONICS MATERIEL READINESS |
Technical Data | NSN 5961-00-843-1676
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 15.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 12.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 4.5 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
| CURRENT RATING PER CHARACTERISTIC | AC200.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AB360.0 MILLIWATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | METAL |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.188 INCHES NOMINAL |
| OVERALL DIAMETER | 0.220 INCHES NOMINAL |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNP |
| SPECIFICATION/STANDARD DATA | 80131-RELESE4803 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |