NSN 5961-00-845-2880

Part Details | TRANSISTOR

5961-00-845-2880 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 7230609, 723060-9, 7230609, 723060-9, 723060009, 723060-009, 723060009, 723060-009, 2N1016B, 2N1016B, 5961-00-845-2880, 00-845-2880, 5961008452880, 008452880

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59JAN 01, 196300-845-288020588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-845-2880
Part Number Cage Code Manufacturer
723060-982577RAYTHEON COMPANYDBA RAYTHEON
723060-905869RAYTHEON COMPANYDBA RAYTHEON
723060-00982577RAYTHEON COMPANYDBA RAYTHEON
723060-00905869RAYTHEON COMPANYDBA RAYTHEON
2N1016B79500WESTINGHOUSE ELECTRIC CORP
2N1016B05277WESTINGHOUSE ELECTRIC CORPSEMICONDUCTOR DIV
Technical Data | NSN 5961-00-845-2880
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION JUNCTION CONTACT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 25.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
CURRENT RATING PER CHARACTERISTICAB5.00 AMPERES MAXIMUM AND AC7.50 AMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAB150.0 MILLIWATTS MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT200.0 DEG CELSIUS JUNCTION
INCLOSURE MATERIAL METAL
MOUNTING METHOD TERMINAL
TERMINAL LENGTH0.562 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
OVERALL LENGTH0.546 INCHES MAXIMUM
OVERALL DIAMETER1.281 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIAL FEATURESJUNCTION PATTERN ARRANGEMENT: NPN