Part Details | THYRISTOR SEMICONDUCTOR DEVICE
5961-00-847-7992 A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 192011P1, 3B1148, 5961-00-847-7992, 00-847-7992, 5961008477992, 008477992
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 01, 1960 | 00-847-7992 | 33096 ( SEMICONDUCTOR DEVICE, THYRISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-847-7992
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 192011P1 | 94117 | BAE SYSTEMS INFORMATION ANDELECTRONIC SYSTEMS INTEGRATION INC. |
| 3B1148 | 12969 | MICRO USPD INC |
Technical Data | NSN 5961-00-847-7992
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 50.0 MAXIMUM REVERSE VOLTAGE, DC |
| CURRENT RATING PER CHARACTERISTIC | AF1.00 AMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AE200.0 MILLIWATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS AMBIENT AIR |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.260 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.370 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNPN |