Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-848-7170 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 10Z62T5, 10Z62T5, 10Z6-2T5, 720670068, 720670-068, 720670068, 720670-068, 5961-00-848-7170, 00-848-7170, 5961008487170, 008487170
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 01, 1962 | 00-848-7170 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-848-7170
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 10Z62T5 | 81483 | INFINEON TECHNOLOGIES AMERICAS CORP.DBA I R |
| 10Z6-2T5 | 81483 | INFINEON TECHNOLOGIES AMERICAS CORP.DBA I R |
| 720670-068 | 82577 | RAYTHEON COMPANYDBA RAYTHEON |
| 720670-068 | 05869 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-00-848-7170
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 6.2 MAXIMUM NOMINAL REGULATOR VOLTAGE |
| CURRENT RATING PER CHARACTERISTIC | EB350.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AF10.0 WATTS MAXIMUM |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | THREADED STUD |
| MOUNTING FACILITY QUANTITY | 1 |
| THREAD SERIES DESIGNATOR | UNF |
| NOMINAL THREAD SIZE | 0.190 INCHES |
| TERMINAL TYPE AND QUANTITY | 1 TAB, SOLDER LUG AND 1 UNINSULATED WIRE LEAD W/TERMINAL LUG |
| OVERALL LENGTH | 0.405 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.667 INCHES MAXIMUM |
| OVERALL WIDTH ACROSS FLATS | 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |