Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-849-4184 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: JAN1N3002BA, 01331003T, 0133-1003-T, 1N1372, RELEASE2215, 10M75Z5, 1N3002B, 26316449, 5961PL1277790, 705000H115, MILS19500124, MILS19500-124, JAN1N3002B, IN3002B, 1N1372A, 152031200, 152-0312-00, 1S5075, 352250010066, 5961-00-849-4184, 00-849-4184, 5961008494184, 008494184
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 01, 1962 | 00-849-4184 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-849-4184
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| JAN1N3002BA | C7191 | ADELCO ELEKTRONIK GMBH |
| 0133-1003-T | 05991 | CAMERON TECHNOLOGIES US, INC.DBA CAMERON'S MEASUREMENT SYSTEMS |
| 1N1372 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| RELEASE2215 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 10M75Z5 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| 1N3002B | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| 26316449 | 99167 | HAMILTON SUNDSTRAND CORPORATION |
| 5961PL1277790 | 9009H | INSPEKTORAT WSPARCIA SIL ZBROJNYCH |
| 705000H115 | 90348 | ITT FEDERAL LABORATORIES DIV OFINTERNATIONAL TELEPHONE AND |
| MILS19500-124 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| JAN1N3002B | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| IN3002B | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| 1N1372A | 99942 | N A P SMD TECHNOLOGY INC |
| 152-0312-00 | 80009 | TEKTRONIX, INC.DBA TEKTRONIX |
| 1S5075 | 01295 | TEXAS INSTRUMENTS INCORPORATEDDBA TEXAS INSTRUMENTS |
| 352250010066 | H0203 | THALES NEDERLANDDBA THALES LAND & JOINT SYSTEMS |
Technical Data | NSN 5961-00-849-4184
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 75.0 MAXIMUM NOMINAL REGULATOR VOLTAGE |
| CURRENT RATING PER CHARACTERISTIC | C+625.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AF10.0 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS CASE |
| INCLOSURE MATERIAL | METAL |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | ANODE |
| MOUNTING METHOD | THREADED STUD |
| MOUNTING FACILITY QUANTITY | 1 |
| THREAD SERIES DESIGNATOR | UNF |
| NOMINAL THREAD SIZE | 0.190 INCHES |
| TERMINAL TYPE AND QUANTITY | 1 TAB, SOLDER LUG AND 1 THREADED STUD |
| OVERALL LENGTH | 0.300 INCHES MINIMUM AND 0.405 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM |
| OVERALL WIDTH ACROSS FLATS | 0.423 INCHES MINIMUM AND 0.438 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTING GENERAL TYPE DATA ON CERTAIN ENVIRONMENTAL AND PERFORMANCE REQUIREMENTS AND TEST CONDITIONS THAT ARE SHOWN AS "TYPICAL", "AVERAGE", "NOMINAL", ETC.). |
| SPECIFICATION/STANDARD DATA | 81349-MIL--19500 TO 124 GOVERNMENT SPECIFICATION |