Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-849-9842 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 1N1766A, RELEASE2316, 4178595077, 4178595-077, 4178595077, 4178595-077, 5961-00-849-9842, 00-849-9842, 5961008499842, 008499842
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 01, 1962 | 00-849-9842 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-849-9842
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 1N1766A | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| RELEASE2316 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 4178595-077 | 82577 | RAYTHEON COMPANYDBA RAYTHEON |
| 4178595-077 | 05869 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-00-849-9842
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 6.2 MAXIMUM NOMINAL REGULATOR VOLTAGE |
| CURRENT RATING PER CHARACTERISTIC | EB41.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AF1.0 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.000 INCHES MINIMUM AND 1.620 INCHES MAXIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.325 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.210 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIFICATION/STANDARD DATA | 80131-RELESE2316 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |