Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-850-6635 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 1N3018A, 1N3018A, 3531313000, 353-1313-000, 1N3018A, 5961-00-850-6635, 00-850-6635, 5961008506635, 008506635
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 01, 1962 | 00-850-6635 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-850-6635
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 1N3018A | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 1N3018A | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| 353-1313-000 | 95105 | ROCKWELL COLLINS, INC.DIV GOVERNMENT SYSTEMS - DALLAS |
| 1N3018A | 01295 | TEXAS INSTRUMENTS INCORPORATEDDBA TEXAS INSTRUMENTS |
Technical Data | NSN 5961-00-850-6635
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 8.2 MAXIMUM NOMINAL REGULATOR VOLTAGE |
| CURRENT RATING PER CHARACTERISTIC | EB31.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AF1.0 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.225 INCHES MAXIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.350 INCHES MAXIMUM |
| OVERALL DIAMETER | 1.350 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIFICATION/STANDARD DATA | 80131-RELESE2986 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |