Part Details | TRANSISTOR
5961-00-850-8921 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 014948, 014-948, 014948, 014-948, 117726, 1177-26, 2N3738, RELEASE5109, 2N3738, SJ4168, L470521, A4L470521, 9324013130, 9324-013130, 18540237, 1854-0237, 18540237, 1854-0237, F429, 2N3738, 3729081, 372908-1, 91226069, 91226069, 062021, 062-021, 5961-00-850-8921, 00-850-8921, 5961008508921, 008508921
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 11, 1967 | 00-850-8921 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-850-8921
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 014-948 | 0PN68 | AMPEX DATA SYSTEMS CORPORATION |
| 014-948 | 92739 | AMPEX SYSTEMS CORP |
| 1177-26 | 72314 | BAE SYSTEMS INFORMATION ANDELECTRONIC SYSTEMS INTEGRATION I |
| 2N3738 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| RELEASE5109 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 2N3738 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| SJ4168 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| L470521 | K3010 | GEMS SENSORS A DIVISION OF DANAHERUK INDUSTRIES LTD |
| A4L470521 | K3010 | GEMS SENSORS A DIVISION OF DANAHERUK INDUSTRIES LTD |
| 9324-013130 | D0290 | GMC-I MESSTECHNIK GMBHDIV GMC-I GOSSEN-METRAWATT GMBH |
| 1854-0237 | 28480 | HEWLETT-PACKARD COMPANYDBA HP |
| 1854-0237 | 1LQK8 | KEYSIGHT TECHNOLOGIES, INC. |
| F429 | 57655 | NAUTEL MAINE INC. |
| 2N3738 | 5V1P1 | ON SEMICONDUCTOR CORPORATION |
| 372908-1 | 14028 | SYPRIS ELECTRONICS, LLC |
| 91226069 | D2416 | THALES DEFENCE & SECURITYSYSTEMSGMBH |
| 91226069 | F6481 | THALES SA |
| 062-021 | 23042 | TRILITHIC, INC. |
Technical Data | NSN 5961-00-850-8921
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 250.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 225.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 6.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
| CURRENT RATING PER CHARACTERISTIC | AB500.00 MILLIAMPERES MAXIMUM AND AC250.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AB20.0 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | METAL |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 2 |
| TERMINAL TYPE AND QUANTITY | 1 CASE AND 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.340 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.620 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |
| SPECIFICATION/STANDARD DATA | 80131-RELESE5109 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |