Part Details | TRANSISTOR
5961-00-850-9869 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: SM5524, MM999, MM999, 1742556640, 174-25566-40, MM999, 5961-00-850-9869, 00-850-9869, 5961008509869, 008509869
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 11, 1967 | 00-850-9869 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-850-9869
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| SM5524 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| MM999 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| MM999 | 1VPW8 | GENERAL DYNAMICS MISSION SYSTEMS,INC |
| 174-25566-40 | 04773 | GTE COMMUNICATION SYSTEMS CORP |
| MM999 | 94990 | MOTOROLA INC.DBA INTEGRATED INFORMATION SYSTEMS |
Technical Data | NSN 5961-00-850-9869
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | -60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND -5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
| POWER RATING PER CHARACTERISTIC | AB360.0 MILLIWATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | METAL |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.210 INCHES NOMINAL |
| OVERALL DIAMETER | 0.230 INCHES NOMINAL |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNP |