Part Details | TRANSISTOR
5961-00-851-1470 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N596, 2N596, RELEASE2195B, 2N596, 723001017, 723001-017, 4192800329, 4192800-329, 2N596, 5961-00-851-1470, 00-851-1470, 5961008511470, 008511470
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 01, 1960 | 00-851-1470 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-851-1470
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2N596 | 1S926 | AMERICAN MICROSEMICONDUCTOR INC |
| 2N596 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| RELEASE2195B | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 2N596 | 14936 | GENERAL SEMICONDUCTOR INC |
| 723001-017 | 05869 | RAYTHEON COMPANYDBA RAYTHEON |
| 4192800-329 | 05869 | RAYTHEON COMPANYDBA RAYTHEON |
| 2N596 | 01295 | TEXAS INSTRUMENTS INCORPORATEDDBA TEXAS INSTRUMENTS |
Technical Data | NSN 5961-00-851-1470
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | GERMANIUM |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 10.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN |
| CURRENT RATING PER CHARACTERISTIC | BF5.00 MICROAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AF100.0 MILLIWATTS MAXIMUM |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |